Theoretical Analysis and Testing Method Optimization of Xjn+in n+/n--Type Silicon Substrate Diffusion Wafer
The diffusion depth of the n-type substrate diffusion wafer(Xjn+)is one of the most im-portant parameters for n+/n--type silicon substrate diffusion wafers,and the theoretical calculation of Xjn+has important guiding significance for phosphorus diffusion production and Xjn+testing.However,there is a significant difference between the current diffusion theory calculation results and experimental data,and more accurate calculation methods are needed.Through experiments,a comparative analysis was conducted between the test and theoretical calculation results of Xjn+,and correction coefficients kn and k were introduced to obtain the Xjn+calculation method that matched the theoretical calculation with the test results.According to the revised calculation method,the staining method for testing Xjn+was opti-mized.By using the new Xjn+calculation method,the difference between the test and theoretical calcula-tion results is less than 2％,which can be used to guide production,and the optimized Xjn+testing method is more convenient.
substrate diffusion waferdiffusion coefficient correctioncollaborative diffusiondiffusion depth of the n-type substrate diffusion wafer(Xjn+)calculationXjn+testing method optimization
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