Electronic Structure of (GaN) n/(AlN) n Strained-Layer Superlattice
The electronic structures of the( GaN )n/( AlN )n strained-layer superlattice under free-standing conditions are calculated with the recursion method.The electronic density of states ( DOS ) and the atomic valences of different elements are obtained.The results show that the Eg of the SLS is still very large.Mixed bonding exists between the atoms of the SLS.The influence of the layer number( n ) to the SLS's DOS is discussed.When there is a vacancy in the SLS, defect energy level will form in the Eg.Finally, the situation of the SLS being doped with Mg atoms is discussed.
Recursion method( GaN )n/( AlN )nstrained-layer superlatticeelectronic structuredefect energy level
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