首页|Hot-carrier effects on irradiated deep submicron NMOSFET
Hot-carrier effects on irradiated deep submicron NMOSFET
扫码查看
点击上方二维码区域，可以放大扫码查看
原文链接
国家科技期刊平台
NETL
NSTL
维普
万方数据
We investigate how γ exposure impacts the hot-carrier degradation in deep submicron NMOSFET with different technologies and device geometries for the first time.The results show that hot-carrier degradations on irradiated devices are greater than those without irradiation,especially for narrow channel device.The reason is attributed to charge traps in STI,which then induce different electric field and impact ionization rates during hotcarrier stress.
γ ray irradiationdeep submicronhot-carrier effect
Cui Jiangwei、Zheng Qiwen、Yu Xuefeng、Cong Zhongchao、Zhou Hang、Guo Qi、Wen Lin
展开 >
Key Laboratory of Functional Materials and Devices Under Special Environments, Chinese Academy of Sciences, Xinjiang Key Laboratory of Electric Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumuqi 830011, China
University of Chinese Academy of Sciences, Beijing 100049, China
国家科技期刊平台
NSTL
维普
万方数据
