首页|Design Method of Anti-Total Ionizing Dose Effect Hardening for Buck-Boost Converter
Design Method of Anti-Total Ionizing Dose Effect Hardening for Buck-Boost Converter
扫码查看
点击上方二维码区域，可以放大扫码查看
原文链接
万方数据
维普
Buck-Boost converter in the total dose radiation environment will mainly bring the out-put voltage drift,linear adjustment rate and load adjustment rate decline and other effects,so that the output stability performance of the circuit deteriorates.Aiming at the problems of high cost,large layout area and poor universality caused by the traditional total ionizing dose effect harden-ing method based on process and layout,this paper proposes a total ionizing dose effect hardening design method with parallel monitoring and hardening,which can achieve total ionizing dose effect hardening at the circuit level without process.The anti-total dose capability of Buck-Boost con-verter is improved.The circuit design and physical implementation of the proposed method are ver-ified based on 0.18 μm bipolar complementary metal-oxide-semiconductor(CMOS)double-diffused metal-oxide-semiconductor(DMOS)(BCD)process.The results show that the system gain decrease rate can be compensated from 19.2%to 6.2%,and the output voltage shift rate can be improved from 2.00%to 0.15%at a dose of 200×103 rad(Si).Moreover,the load adjustment rate and linear adjustment rate are reduced.They are respectively decreased to 0.191%/A and 0.093%/V.This provides a new idea for the design of total ionizing dose effect hardening at circuit and system level.
万方数据
维普
