Study on the Band Structure,Density of Tates and Optical Properties of Sulfur Doped Indium Antimonide Semiconductors
The band structure,density of states,and optical properties of InSb,InSb0.75S0.25 and InSb0.5S0.5were calculated and compared by using Materials Studio software based on first principles.The calculation results displayed that the doping of S element caused the impurity levels to be generated near the top of the conduction band in InSb,the conduction band moved up,the band gap increased,and the probability of electron transition from the valence band to conduction band decreased.As the concentration of doped S in InSb was increased,the static dielectric constant,the range of absorption spectrum,the absorption intensity,and the peak value of energy loss will be declined.
万方数据
维普
