High temperature oxidation behavior of high silicon non oriented electrical steel
The oxidation behavior of high silicon non-oriented silicon steel at different temperatures was studied by comparative experiments. Field emission scanning electron microscopy with an EDS detector was used to observe the micromorphology,structural composition,and segregation of alloy elements of the oxide layer of high-silicon non-oriented electrical steel after heating at different temperatures (1030～1240℃).The results show that the oxide layer of highsilicon non-oriented electrical steel after high-temperature heating mainly consists of four parts,namely pure iron oxide layer,fayalite and iron oxide mixed layer,Si-rich and Si-poor mixed layer,and dense oxide film layer;During the high-temperature oxidation process,Si component segregation occurs. The segregation depth of Si can reach 130μm at 1240℃. The difference in Si mass fraction at different depths of segregation can be as high as 0.9％. As the temperature decreases,the degree of segregation gradually weakens and finally disappears.
high silicon non oriented electrical steeloxide layerSi segregationfayalitedense oxide film
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