Different width NiFe/Ta bilayer line patterns were designed on the same lithographic plate using a segmented template deposition method,and the samples were prepared by magnetron sputtering deposition.An automated electrical testing system was constructed to perform batch testing of the inverse spin Hall voltage signals of the samples.Experimental results show that the width of the samples affects the symmetry and amplitude of the testing voltage signal.By fitting the symmetric and antisymmetric components of the signal,their numerical values and ratios were obtained,as well as the curves of their changes with the sample width.By analyzing the factors affecting the inverse spin Hall voltage and the spin rectification voltage,it was found that as the sample width decreases,the effect of the spin rectification effect gradually decreases,and the larger the applied microwave magnetic field,the more obvious this change becomes.This is due to the dependence of the anisotropic magnetoresistance on the width of the thin film.This research provides important design principles and guidance for practical spin electronic devices.
关键词
NiFe/Ta薄膜/逆自旋霍尔效应/自旋整流效应/各向异性磁电阻
Key words
NiFe/Ta film/inverse spin Hall effect/spin rectification effect/anisotropic magnetoresistance
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