SiO2溅射功率对Fe40Co40B20-SiO2软磁纳米颗粒膜磁性能的影响

Effect of SiO2 sputtering power on the magnetic properties of Fe40Co40B20-SiO2 granular films

蒋云川 ¹余忠 ¹李启帆 ¹邬传健 ¹蒋晓娜 ¹孙科 ¹兰中文¹

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作者信息

1. 电子科技大学材料与能源学院,四川成都 610054
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摘要

用磁控溅射法沉积Fe40Co20B20-SiO2软磁纳米颗粒膜,对其微观结构和磁性能进行了分析.研究发现,随着SiO2溅射功率的增高,Fe40Co20B20-SiO2薄膜粗糙度、截止频率、磁导率、饱和磁化强度均降低,薄膜电阻率增大.在SiO2溅射功率为500 W时,Fe40Co20B20-SiO2薄膜电阻率高达1973 μΩ·cm,且截止频率也高达3.67 GHz.相较于未添加SiO2的薄膜,其电阻率有了显著提升,且同样拥有较高的截止频率.因此,通过该方法制备的Fe40Co20B20-SiO2薄膜可有效应用于GHz频段的软磁薄膜电感.

Abstract

Fe40Co20B20-SiO2 thin films were deposited by magnetron sputtering,and their microstructure and magnetic properties were analyzed.It was found that with the increase of SiO2 sputtering power,the roughness,ferromagnetic resonance frequency,permeability and saturation magnetization of Fe40Co20B20-SiO2 films decrease,and the resistivity of the films increases.When the SiO2 sputtering power is 500 W,the resistivity of Fe40Co20B20-SiO2 film is as high as 1973 μΩ·cm,and the cut-off frequency is as high as 3.67 GHz.Compared with that of film without SiO2,its resistivity has been greatly improved,and cutoff frequency increases slightly.Therefore,the Fe40Co20B20-SiO2 thin film prepared by this method can be effectively applied to the soft magnetic thin film inductor in GHz band.

关键词

Fe40Co20B20-SiO2薄膜/磁控溅射/SiO2溅射功率/磁性能/电阻率/截止频率

Key words

Fe40Co20B20-SiO2 film/magnetron sputtering/SiO2 sputtering power/magnetic properties/resistivity/cut-off frequency

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出版年

2024

磁性材料及器件

中国西南应用磁学研究所

磁性材料及器件

影响因子：0.358

ISSN：1001-3830

参考文献量10

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