首页|厚度对FeN薄膜结构与磁性能的影响

厚度对FeN薄膜结构与磁性能的影响

Effect of thickness on the microstructure and magnetic properties of FeN films

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利用射频磁控溅射的方法在常温下制备一系列不同厚度的FeN薄膜,分析薄膜厚度对其微结构与磁特性的影响.研究表明,在常温下制备的FeN薄膜,都呈现出较为明显的非晶纳米晶结构,没有出现FeN结晶相,样品矫顽力随薄膜厚度增大先增大后减小.当薄膜厚度为40nm时,具备较为明显的软磁性能,且在外磁场诱导下样品呈现出明显的面内单轴磁各向异性;当厚度为80 nm时,薄膜表面呈现出条纹畴结构,面内单轴磁各向异性消失,表现出较弱的垂直磁各向异性;当厚度分别为120nm、180nm以及240nm时,依然没有面内单轴各向异性,逐步呈现出迷宫畴结构.对40 nm和80 nm厚薄膜的磁谱测试结果显示,前者的自然共振频率为2 GHz,后者呈现出多个共振峰.经过430 ℃保温5 h条件下真空退火后所有样品都表现出明显的结晶现象,主要包含γ'-Fe4N相和ε-Fe3N相,其中120nm厚样品为较为纯净的γ'-Fe4N相多晶薄膜.
FeN film with different thickness was prepared by RF magnetron sputtering at room temperature,and the effect of thickness on microstructure and magnetic properties was analyzed.The results show that the FeN films prepared at room temperature show obvious amorphous or nano-crystalline,and there is no FeN crystalline phase.With increasing film thickness the coercivity first increases and then decreases.When the thickness of sample is 40 nm,it has obvious soft magnetic properties,and the sample shows obvious in-plane uniaxial magnetic anisotropy under the induction of external field.When the thickness is 80 nm,stripe domains appears on the surface of the sample,showing weak perpendicular magnetic anisotropy.When the thickness is 120 nm,180 nm and 240 nm,the sample gradually presents a labyrinth domain structure.The magnetic spectrum of 40 nm and 80 nm sample show that the natural resonance frequency of 40 nm thick FeN film is 2 GHz and the 80 nm thick FeN film has multi resonance peaks.After annealing at 430 ℃ for 5 h in vacuum,it is found that all samples show obvious crystallization,mainly including γ'-Fe4N and ε-Fe3N phase,in which the sample with thickness of 120 nm has relatively pure polycrystalline γ'-Fe4N phase.

FeN filmsthicknessmagnetic propertiesmicrostructure

李晓宇、李天明、蒋运石、蒲祎涵、任勇、王皎银、闫欢、吴薄、张芦

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中国电子科技集团公司第九研究所,四川绵阳 621000

电子科技大学电子科学与工程学院,四川成都 610054

西南科技大学环境友好能源材料国家重点实验室,四川绵阳 621000

FeN薄膜 厚度 磁性能 微结构

国家重点研发计划项目国防科工局国防基础科研计划稳定支持项目

2021YFF0700900SK2023-022

2024

磁性材料及器件
中国西南应用磁学研究所

磁性材料及器件

影响因子:0.358
ISSN:1001-3830
年,卷(期):2024.55(3)
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