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基于IGBT时序控制的磁阻发射无级调速实现

Realization of reluctance-launching stepless speed regulation based on IGBT timing control

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为了实现磁阻发射无级调速威力可控,构建了 IGBT时序控制无反拉力作用的二级磁阻发射电路,研究了电枢在线圈内弹道的速度-时间曲线,采用最小二乘原理对速度-时间曲线进行了分级多项式拟合;基于电枢终点效应及电枢飞行阻力系数,构建了弹丸飞行方程组及电枢出口速度的数值推导求解方法;当电枢目标出口速度小于第一级线圈所能达到的最大速度时,第二级线圈不工作,通过第一级速度时间拟合函数求得IGBT的通断时序来实现电枢目标出口速度;当电枢目标出口速度高于第一级线圈最高速度时,第一级IGBT按最大速度设置通断时序,通过第二级速度时间拟合函数求得IGBT的通断时序来实现电枢目标出口速度;最后通过实验对测试结果与理论值进行比较与分析,得出了通过选择正确的IGBT通断时序可以实现磁阻发射无级调速的结论.
To realize stepless speed control of the reluctance launch,a two-stage reluctance launch circuit with IGBT timing control and no reverse pull was constructed,and the velocity-time curve of armature in the coil was studied,based on the armature end-point effect and the armature resistance coefficient,the function of velocity to time is obtained by the hierarchical polynomial fitting of the velocity-time curve with the least square theory.When the target exit velocity of the armature is less than the maximum velocity of the first stage coil,the second stage coil does not work,the on-off time sequence of IGBT is obtained by fitting the first-stage speed time function to realize the armature target exit velocity,and when the armature target exit velocity is higher than the highest speed of the first-stage coil,the first stage IGBT sets the on-off time sequence according to the maximum speed,and the on-off time sequence is obtained by the second stage velocity time fitting function to realize the armature target exit speed.Finally,the experimental results are compared with the theoretical values,and it is concluded that the stepless speed regulation can be realized by selecting the correct IGBT on-off timing sequence.

reluctance launchIGBTtiming controlcurve fittingstepless speed regulation

齐文达、向红军、孔庆奕、孟学平

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河北交通职业技术学院轨道交通系,河北石家庄 050035

陆军工程大学弹药工程系,河北石家庄 050003

中国人民武装警察部队研究院,北京 100012

磁阻发射 IGBT 时序控制 拟合 无级调速

2024

磁性材料及器件
中国西南应用磁学研究所

磁性材料及器件

影响因子:0.358
ISSN:1001-3830
年,卷(期):2024.55(4)