磁性材料及器件2024,Vol.55Issue(4) :62-66.DOI:10.19594/j.cnki.09.19701.2024.04.012

X波段单面场微带隔离器设计

Design of X-band single-side magnetic field microstrip isolator

孙静 陈宁 高男 杜俊波 王倩 李扬兴
磁性材料及器件2024,Vol.55Issue(4) :62-66.DOI:10.19594/j.cnki.09.19701.2024.04.012

X波段单面场微带隔离器设计

Design of X-band single-side magnetic field microstrip isolator

孙静 1陈宁 1高男 1杜俊波 1王倩 1李扬兴1
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作者信息

  • 1. 中国电子科技集团公司第九研究所,四川绵阳 621000
  • 折叠

摘要

针对提升微带器件隔离度的需求,根据微带环行器的设计理论,设计了一种工作在X波段的高隔离度、高温度稳定性的单面场微带隔离器.通过对微带器件工作模式分析,提出开缝六边形结匹配矩形开路负载的电路结构.测试结果表明,采用开缝六边形结匹配矩形开路负载电路结构设计的X波段单面场微带隔离器,在11~11.4 GHz工作频率内、-55~+85 ℃温度下,插入损耗小于0.3 dB,电压驻波比小于1.3,隔离度大于23 dB,达到设计要求.

Abstract

In order to improve the isolator of microstrip devices,a single-side magnetic field microstrip isolator with high isolation and high temperature stability are designed according to the design theory of microstrip circulator.Based on the analysis of the working mode of microstrip devices,a new circuit structure of silted hexagon junction matching rectangular open load is designed.The test result show that in the operating frequency band of 11 to 11.4 GHz and the temperature range is-55 to+85 ℃,the X-band single-side magnetic field microstrip isolator designed with rectangular open load circuit structures matched by silted hexagon junction has the insertion loss less than 0.3 dB,the VSWR less than 1.3,the isolation greater than 23 dB,meeting the design requirements.

关键词

单面场微带隔离器/X波段/隔离度/开缝六边形结电路结构

Key words

single-side magnetic field microstrip isolator/X-band/isolation/silted hexagon junction circuit structures

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出版年

2024
磁性材料及器件
中国西南应用磁学研究所

磁性材料及器件

影响因子:0.358
ISSN:1001-3830
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