Construction and power consumption analysis of electrothermal coupling model of phase-change storage unit based on Ge2Sb2Te5
Aiming at the problem of how to reduce the power consumption of the RESET operation of PCM,the electrothermal coupling model of the T-structure PCM memory unit is constructed by means of multi-physics coupling analysis.The influence of Ge2Sb2Te5 phase change film thickness,conductivity and diameter of heating electrode on the RESET peak temperature of the device and the effect of implanting carbon nano buffer layer in the heating electrode on the RESET power consumption of the device are discussed.The research results indicate that the current during the device's RESET process shows a decreasing trend with the thickness of Ge2Sb2Te5 thin film increasing,the conductivity decreasing,and the diameter of the heating electrode reducing.The results show that with the increase of Ge2Sb2Te5 film thickness,the decrease of conductivity and the decrease of heating electrode diameter,the RESET current of the device decreases.When the carbon nano buffer layer is implanted in the T-structure unit,the peak temperature inside the device is obviously increased under the condition of constant excitation current intensity.
Ge2Sb2Te5phase change memoryRESET operationmulti-physics field coupling
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