首页|基于纳米墨水法制备用于太阳能电池吸收层的CuInSxSe2-x薄膜

基于纳米墨水法制备用于太阳能电池吸收层的CuInSxSe2-x薄膜

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以无机盐作为金属源(InCl3、CuCl 以及 CS2),采用溶剂热法制备 CuInS2 纳米粒子,进一步采用易热解的铜、铟、硫金属有机前体作为可降解配体成膜交联剂,交联剂包覆铜铟硫纳米粒子得到前驱物墨水,然后通过旋涂法制备CuInS2 薄膜,最后对CuInS2 薄膜进行硒化,得到的CuInSxSe2-x(CISS)吸光层.利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、热重(TG)和霍尔效应测试系统对 CISS 薄膜的结构和性质进行了研究.结果表明:硒化后的薄膜晶粒尺寸变大,仍为黄铜矿结构.霍尔效应分析表明,所制备的 CISS 薄膜可用于薄膜太阳能电池的吸收层.
Preparation of CuInSxSe2-x Thin Films by Nanoparticle Ink Method
CuInS2 nanoparticles were prepared by solvothermal method using inorganic salts as metal sources(InCl3,CuCl and CS2).Further,biodegradable organic precursors of copper,indium and sulfur metal were used as film crosslinking agents,which coated copper indium sulfur nanoparticles with crosslinking agents to obtain precursor ink,and then CuInS2 film was prepared by spin coating.Finally,CuInSxSe2-x(CISS)light-absorbing layer was obtained by selenizing CuInS2 film.The structure and properties of CISS films were investigated by X-ray diffractometer(XRD),scanning electron microscope(SEM),thermogravimetric(TG)and Hall-effect testing.The results showed that the size of the selenized film was enlarged and the structure was still chalcopyrite.Hall-effect analysis showed that the prepared CISS film was suitable for the absorption layer of thin film solar cells.

CuInS2Ink methodPhotoelectric propertyNanoparticle

李媛、文俊升、王月

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渤海大学 物理科学与技术学院,辽宁 锦州 121013

CuInS2 墨水法 光电性能 纳米粒子

辽宁省教育厅一般项目辽宁省教育厅一般项目渤海大学校级一般培育科研项目

LJKMZ20221493JYTMS202316240524xn044

2024

当代化工
中国石油抚顺石化公司,中国石化抚顺石油化工研究院,沈阳市医药和化工行业联合会

当代化工

CSTPCD
影响因子:0.412
ISSN:1671-0460
年,卷(期):2024.53(7)
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