二维半导体过渡金属二硫属化物(transition metal dichalcogenide，TMD)具有独特的电学、光学和力学性能，在数字电路、光伏器件和能量存储等多个领域中具有巨大的应用潜力。通过表面掺杂控制TMD的电学性能为实现灵敏传感提供了有效的方法。本文开展了氧等离子体对二硫化钼(MoS2)掺杂特性的研究。首先，测试了MoS2 场效应晶体管(field-effect transistor，FET)的输运特性，发现氧等离子体处理对FET具有p型掺杂作用。随后，通过拉曼光谱研究了掺杂机制的成因，并证实了沟道表面类MoO3 缺陷的形成。最后，研究了经等离子体处理的晶体管的湿度传感特性，由于氧等离子体处理使得沟道对水分子的吸收中心增加，在潮湿环境下晶体管具有十分灵敏的响应特性，源漏电流值变化了约 54%。这项工作不仅提供了一种调控TMD电学性能的简单方法，也展示了低维材料化学传感器的发展潜力。
Surface Doping and Humidity Sensing of MoS2 Field-Effect Transistor by Oxygen Plasma Treatment
Two-dimensional(2D)semiconducting transition metal dichalcogenides(TMDs)have unique electrical,optical and mechanical properties,and hold great potential for diverse applications such as digital circuits,light harvesting and energy storage.Controlling the electrical properties of TMDs through doping provides an effective approach for sensitive sensing.This paper presents the experimental study of the doping effect of oxygen plasma on molybdenum disulfide(MoS2).Firstly,the transport characteristics of the MoS2 field-effect transistor(FET)were investigated and the MoS2 FET exhibited p-type doping through plasma treatment.Then,the cause of the doping effect was further studied,and the doping effect was attributed to the formation of MoO3-like defects on the surface of the channel,confirmed by Raman spectroscopy.Finally,the humidity-sensing behavior of the plasma-treated MoS2 FET was studied.The MoS2 FET exhibited high sensitivity to humidity because of the increased adsorption centers for water molecules,with the source-drain current change of approximately 54%in humid environment.The work would provide a simple method to modify the electrical properties of TMDs and show potential for low-dimensional chemical sensors.
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