东华大学学报(英文版)2024,Vol.41Issue(3) :241-248.DOI:10.19884/j.1672-5220.202303007

大尺寸单层石墨烯图案的金网转移

Aurum-Mesh Transfer of Large-Scale Monolayer Graphene Patterns

李超 姜萌
东华大学学报(英文版)2024,Vol.41Issue(3) :241-248.DOI:10.19884/j.1672-5220.202303007

大尺寸单层石墨烯图案的金网转移

Aurum-Mesh Transfer of Large-Scale Monolayer Graphene Patterns

李超 1姜萌1
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作者信息

  • 1. 东华大学理学院,上海 201620
  • 折叠

摘要

当化学气相沉积(chemical vapor deposition,CVD)法制备的石墨烯被应用于各种高性能器件时,石墨烯的转移和图案化过程通常会降低石墨烯的固有特性.为实现石墨烯图案的高质量和大规模转移,该研究采用了湿法转移和机械剥离相结合的新方法.这种方法需要制备具有一定孔隙的金网以作为剥离带.接触区(金箔和石墨烯之间)能为机械剥离提供足够的黏附力,以形成均匀的单层石墨烯,而非接触区(孔洞和石墨烯之间)的力相对较弱,有利于石墨烯图案从基底上释放.石墨烯表面形貌和电学特性表明,石墨烯表面洁净且均匀,用该石墨烯制备的场效应晶体管具有高的载流子迁移率和小的狄拉克电压.金网格转移方法能有效提高石墨烯图案的质量和转移效率,这为CVD法制备石墨烯的应用开辟了更广阔的前景,同时也为其他二维材料的转移提供了参考.

Abstract

When graphene prepared by chemical vapor deposition(CVD)method is applied to various high-performance devices,graphene's transfer and patterning process usually reduces its intrinsic properties.A new method combining wet transfer and mechanical exfoliation can be utilized to accomplish high-quality and large-scale transfer of graphene patterns.This method requires the preparation of an aurum(Au)-mesh with pores of a specific form as the peeling belt.The contact area between the Au and graphene can offer sufficient adhesion to the homogeneous monolayer graphene for mechanical exfoliation,whereas the non-contact area between the hole and graphene has a relatively weak force to release the graphene patterns on the substrate.The surface morphology and electrical characterization of graphene show that the graphene surface is clean and uniform,while graphene field-effect transistors have high carrier mobility and small Dirac voltage.The Au-mesh transfer method can effectively improve the quality of the graphene patterns as well as the efficiency of the transfer,which opens up a broader scope for the application of CVD graphene and also provides a reference for the transfer of other CVD two-dimensional(2D)materials.

关键词

石墨烯转移/石墨烯图案/金网/光刻/晶体管

Key words

graphene transfer/graphene pattern/Au-mesh/lithography/transistor

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出版年

2024
东华大学学报(英文版)
东华大学

东华大学学报(英文版)

影响因子:0.091
ISSN:1672-5220
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