Experimental and simulation study of electrical characteristics of triple-junction GaAs high-concentration photovoltaic cells
A set of reflective high-power concentrating photovoltaic system was built,the mathemati-cal model of the equivalent circuit of single diode of InGaP/InGaAs/Ge triple junction gallium arse-nide battery was established,and the influence mechanism of concentrating ratio,radiation intensity and cell temperature on the electrical characteristics of concentrating photovoltaic modules,such as open-circuit voltage,short-circuit current and peak power,was studied,and the experimental results were compared with the simulated values.The results show that when the direct radiation intensity is 700 W/m2 and the cell temperature is 328 K,as the concentrating ratio increases from 650 X to 800 X,the short-circuit current,open-circuit voltage and peak power of the three-junction gallium arsenide concentrating photovoltaic module increase by 19.8％,1.2％and 16.6％,respectively,the root mean square error of the experimental and simulated values is 3.17％,3.31％and 12.1％,respectively,while the fill factor and conversion efficiency decrease by 3.8％and 5.4％,respectively.The root mean square errors of experimental and simulated values were 6.34％and 12.1％,respectively.When the concentrating factor is 700 X,the battery temperature increases from 315 K to 328 K as the direct radiation intensity increases from 419 W/m2 to 700 W/m2,and the experimental values of short-circuit current,open-circuit voltage and fill factor increase from 0.588 A to 1.01 A,from 11.24 V to 10.96 V,and from 82.49％to 80.96％,respectively,and the root mean square errors of the experimental and simulated value theory are 1.97％,2.45％,and 6.15％,respectively.
solar energytriple-junction solar cellhigh concentration photovoltaic systemhyperbo-loid mirrorsmathematical mode
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维普
