Design of CMOS class-E power amplifier for low power applications
A fully integrated clnss-E power amplifier(PA) at 2.4 GHz implemented in a 0. 18 μm 6-metal-layer mixed/RF CMOS (complementary metal-oxide-semiconductor transistor) technology is presented. A two-stage amplification structure is chosen for this PA. The driving stage produces a high swing switch signal by using resonation technology. The output stage is designed as a class-E topology to realize the power amplification. Under a 1.2 V power supply, the PA delivers a maximum output power of 8.8 dBm with a power-added efficiency(PAE) of 44%. A new power control method for the class-E power amplifier is described. By changing the amplitude and duty cycle of the signal which enters the class-E switch transistor, the output power can be covered from - 3 to 8.8 dBm through a three-bit control word. The proposed PA can be used in low power applications, such as wireless sensor networks and biotelemetry systems.
class-E power amplifiercomplementary metal-oxide-semiconductor transistor(CMOS) technologylow power applica-tion
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