Analysis And Calculation of the Thermal Relaxation Time for MIS Structure
The thermal relaxation time(τth)for a metal-insulation-semiconductor(MIS)structure transferred from the deeply-de-pleted state to strong-inversion state is analyzed.By establishing a more accurate model than that in textbooks and performing the corresponding mathematical derivation,the relationship among the τth,the depleted region width(xd0),the maximum depleted re-gion width(xdm),the net generation rate of minor carriers(G)and the doping concentration(ND)is revealed.Furthermore,the theoretical analyses are verified by the simulation based on MEDICI,which is beneficial for the students to have systematic compre-hension on the semiconductor surface effects and also helps them to engage in innovative research on semiconductors in the future.
semiconductor physicsMIS structurethermal relaxation time
万方数据
维普
