The thermal relaxation time(τth)for a metal-insulation-semiconductor(MIS)structure transferred from the deeply-de-pleted state to strong-inversion state is analyzed.By establishing a more accurate model than that in textbooks and performing the corresponding mathematical derivation,the relationship among the τth,the depleted region width(xd0),the maximum depleted re-gion width(xdm),the net generation rate of minor carriers(G)and the doping concentration(ND)is revealed.Furthermore,the theoretical analyses are verified by the simulation based on MEDICI,which is beneficial for the students to have systematic compre-hension on the semiconductor surface effects and also helps them to engage in innovative research on semiconductors in the future.
关键词
半导体物理/MIS结构/热弛豫时间
Key words
semiconductor physics/MIS structure/thermal relaxation time
维普
万方数据