Theoretical derivation of the physical analytical model of short-channel negative capacitance gate-all-around field effect transistor
EDA design software of Gate-All-Around Field-Effect Transistor(GAAFET)is one of the key technologies in chip industry in our country,which has been paid high attention by science and industry.In this paper,the physical analytical model of the traditional short-channel GAAFET is derived by reasonable approxima-tion,and then the physical analytical model of the negative capacitance GAAFET is derived by adding ferroelectric layer.The derivation of the physical model is helpful to deepen students'understanding of the working principle of GAAFET,stimulate students'learning interest and improve their research ability.
negative capacitancegate-All-Around field effect transistorshort-channelferroelectric
万方数据
维普
