Study of dimensionality-dependent thermionic emission mechanism in semiconductor Schottky heterostructures
In this paper,classical thermionic emission model is employed to explore the formulas and their evo-lution for derivation of thermionic emission current in semiconductor Schottky junctions under three-dimensional,two-dimensional,and one-dimensional scenarios.These extended formulas can be widely applied to current re-search hotspot of interface barrier extraction and analysis in low-dimensional semiconductors,and should further contribute to enhancing students'understanding of semiconductor knowledge and the integrated application of related scientific research and analytical methods.
万方数据
维普
