In this paper,classical thermionic emission model is employed to explore the formulas and their evo-lution for derivation of thermionic emission current in semiconductor Schottky junctions under three-dimensional,two-dimensional,and one-dimensional scenarios.These extended formulas can be widely applied to current re-search hotspot of interface barrier extraction and analysis in low-dimensional semiconductors,and should further contribute to enhancing students'understanding of semiconductor knowledge and the integrated application of related scientific research and analytical methods.
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