首页|α粒子软错误机理及加速试验技术研究

α粒子软错误机理及加速试验技术研究

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基于Am-241放射源,搭建SRAM单粒子效应测试系统,结合α粒子辐照试验、反向分析和蒙特卡洛仿真开展α粒子在65、90 nm工艺SRAM器件中的软错误机理和加速试验技术研究.结果表明,65 nm SRAM在Am-241放射源加速试验条件下的α粒子单粒子翻转截面远高于90 nm SRAM.基于反向分析结果构建器件三维仿真模型,65 nm SRAM器件使用6层金属布线,灵敏区大小为0.2 μm(x)×0.19 μm(y)×0.45 μm(z),临界电荷约为1 fC.蒙特卡洛仿真发现,65 nm SRAM器件的灵敏区沉积能量谱和单粒子翻转截面表现出明显的入射角度依赖性.
Research on the α Particles Soft Error Mechanism and Accelerated Test Technolog
Based on the Am-241 radioactive source,the SRAM single particle effect test system is constructed.Combining α particles irradiation test,reverse analysis and Monte Carlo simulation,the soft error mechanism and accelerated test technology research of α particle in 65 nm and 90 nm SRAM device is carried out.The results show that α single particle turn over cross section of 65 nm SRAM under the condition of Am-241 accelerated testing is much higher than 90 nm SRAM.Based on inverse analysis results,the 3D simulation model of the device is constructed,the 65 nm SRAM devices use six layer metal wiring,the sensitive region size is 0.2 μm(x)×0.19 μm(y)×0.45 μm(z),and the critical charge is about 1 fC.Monte Carlo simulation results show that the deposition energy spectrum in sensitive region and flip cross section of single particle of 65 nm SRAM show obvious dependence of the incident angle.

α particlesoft errordeposition energy spectrum in sensitive regionflip cross section of single particle

李守委、梁佩、陈思、祁杰俊

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无锡中微高科电子有限公司,江苏 无锡 21400

中国电子科技集团公司第五十八研究所,江苏 无锡 21400

工业和信息化部电子第五研究所,广东 广州 511370

α粒子 软错误 灵敏区沉积能量谱 单粒子翻转截面

2024

电子产品可靠性与环境试验
工业和信息化部电子第五研究所(中国电子产品可靠性与环境试验研究所) (中国赛宝实验室)

电子产品可靠性与环境试验

影响因子:0.438
ISSN:1672-5468
年,卷(期):2024.42(2)
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