Write Voltage Generation Circuit Design for STT-MRAM
Spin transfer torque magnetic random access memory(STT-MRAM)is a new type of non-volatile memory with a wide range of applications in various industries.STT-MRAM uses magnetic tunnel junction(MTJ)devices to store information.The write voltage usually has zero temperature coefficient,but the critical flip-flop voltage of MTJ has a negative temperature characteristic,so the difference between the write voltage and the critical flip-flop voltage is large at high temperature,which affects the lifetime of the device,and at low temperature,the write voltage is close to,or may even be lower than the critical flip-flop voltage,which makes it difficult to write.Aiming at the negative temperature characteristic of the critical flip-flop voltage of MTJ,a wide temperature adaptive write voltage generator circuit is designed to provide stable write voltage for MTJ at-40-125 ℃,to realize the normal writing of data in wide temperature range,especially at low temperature,and to improve the lifetime of the device at high temperature.After post-simulation verification,the MTJ can be successfully written in the temperature range of-40-125 ℃,and the difference between the write voltage and the critical flip-flop voltage is about 100 mV.
spin transfer torque magnetic random access memorymagnetic tunnel junctionwide temperaturetemperature adaptivewrite voltage generation circuit
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维普
