Spin transfer torque magnetic random access memory(STT-MRAM)is a new type of non-volatile memory with a wide range of applications in various industries.STT-MRAM uses magnetic tunnel junction(MTJ)devices to store information.The write voltage usually has zero temperature coefficient,but the critical flip-flop voltage of MTJ has a negative temperature characteristic,so the difference between the write voltage and the critical flip-flop voltage is large at high temperature,which affects the lifetime of the device,and at low temperature,the write voltage is close to,or may even be lower than the critical flip-flop voltage,which makes it difficult to write.Aiming at the negative temperature characteristic of the critical flip-flop voltage of MTJ,a wide temperature adaptive write voltage generator circuit is designed to provide stable write voltage for MTJ at-40-125 ℃,to realize the normal writing of data in wide temperature range,especially at low temperature,and to improve the lifetime of the device at high temperature.After post-simulation verification,the MTJ can be successfully written in the temperature range of-40-125 ℃,and the difference between the write voltage and the critical flip-flop voltage is about 100 mV.
关键词
自旋转移力矩随机磁存储器/磁隧道结/宽温区/温度自适应/写电压产生电路
Key words
spin transfer torque magnetic random access memory/magnetic tunnel junction/wide temperature/temperature adaptive/write voltage generation circuit
维普
万方数据