Wide band gap semiconductor materials,represented by silicon carbide and gallium nitride,have become a hot spot in international semiconductor research and industrialization.This paper takes silicon carbide substrate technology patent activities as the research objective,makes a comparative analysis from the perspectives of patent application trend,patent geographical distribution,main applicants and technology field distribution,sorts out the advantages and existing problems of patent layout,and puts forward countermeasures and suggestions for the optimization and quality improvement of silicon carbide substrate technology patent layout in Fujian Province,Fully help Fujian Province silicon carbide substrate technology optimization and upgrading.
维普
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