In order to further increase the autonomous control capability of SiC ion implanting technology and reduce the cost of SiC devices,the domestic replacement of SiC ion implanter is imminent.This paper mainly introduces the development process and the key technologies of domestic SiC ion implanter.At present,the core technology of domestic SiC ion implanter has made a breakthrough and been applied in the production line.The device yield,performance and other indicators are equivalent to the level of foreign imported machines,could meet the requirements of SiC device production.
关键词
碳化硅/高能离子注入机/金属离子源/高温注入
Key words
SiC/High energy ion implanter/Metal ion source/Ion implantation at high temperature
维普
万方数据