Carbon film deposition process is a key process in the manufacturing of integrated circuit silicon carbide devices.By depositing a carbon film on the surface of silicon carbide,it effectively prevents surface degradation of silicon carbide devices after high-temperature annealing and avoids device failure.This paper uses magnetron sputtering to prepare carbon films on silicon carbide substrates and explores the influence of different parameters on the carbon film.A carbon film with a smooth surface and uniformity less than 2%is obtained.It is confirmed by characterization that the carbon film has good adhesion to silicon carbide substrate.The carbon film deposited in actual production plays a protective role in silicon carbide devices and effectively ensures yield of chip.
关键词
碳化硅/集成电路/碳膜沉积工艺/磁控溅射法/物理气相沉积
Key words
Silicon carbide/Integrated circuits/Carbon film deposition process/Magnetron sputtering method/Physical vapor deposition
维普
万方数据