In order to reduce process costs,improve the surface glossiness of silicon wafers,reduce surface roughness,lower surface metal content,and improve production efficiency,we analyzed the reaction mechanism of the HNO3:HF:CH3COOH mixed acid system.By changing the acid etching process parameters such as corrosion removal amount and corrosion solution temperature,the corrosion reaction rate of ultra-thin silicon wafers can be effectively controlled,surface roughness can be reduced,and surface glossiness can be improved.Discovered removal amount reaching 100 μm,the surface roughness can reach 0.065 μm.Under the same conditions,when the corrosion solution temperature is 45℃,the surface roughness is the smallest and the reflectivity is the highest.
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