Preparation of SiC Surface Protective Film Annealed at High Temperature
Diamond-like carbon(DLC)films prepared by photoresist coating,PVD,PECVD and RIE cover the surface of SiC wafer as the protective layer for high-temperature activation annealing after SiC ion implantation.There is no obvious morphological degradation on all the wafer surfaces after high-temperature annealing.The four methods are compared and analyzed from the aspects of film stress,thickness,productivity and cost.
SiC(Silicon carbide)DLC(Diamond-like carbon)High temperature anneal
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