Present Status of Gallium Oxide Materials and Its Preparation Methods and Processes
胡凡 1谢添乐 1陈庆广 1黎昆 1邓家乐 1万胜强1
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作者信息
1. 中国电子科技集团公司第四十八研究所, 湖南 长沙 410111
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摘要
超宽禁带半导体材料-Ga2O3性能优越、制造成本低,在日盲紫外探测、电力电子器件、射频器件等领域优势明显.Ga2O3晶体及外延生长方面,日本拥有Novel Crystal Technology(NCT)和Flosfia两家可商业化量产的公司.NCT公司能采用导模法和垂直布里奇曼法生产150 mm(6英寸)单晶氧化镓.外延层生长方面,目前卤化物气相外延、雾滴-化学气相沉积技术均已实现100 mm(4英寸)外延片的量产.国内氧化镓晶体生长及外延层制备已有布局,并已掌握了导模法制备150 mm β-Ga2O3晶体生长以及HVPE法同质外延100 mm晶圆技术,镓仁半导体采用铸造法制备了150 mm非故意掺杂及导电型氧化镓(β-Ga2O3)单晶及衬底,但国内量产水平偏低.
Abstract
Ultra-wide bandgap semiconductor material Ga2O3,which has excellent performance and low manufacturing cost,has obvious advantages in solar blind UV detection,high power devices and radio frequency devices. In terms of Ga2O3 Crystal and epitaxial growth,Japan has two commercialized mass production companies,Novel Crystal Technology (NCT) and Flosfia. NCT can produce 150 mm (6 in) single crystal gallium oxide using the Edge-Defined Film-Fed and Vertical Bridgman growth method. In terms of epitaxial layer growth,both chemical vapor epitaxy and mist chemical vapor deposition technologies have achieved mass production of 100 mm (4 inches) epitaxial wafer. Gallium oxide crystal growth and epitaxial layer preparation have been arranged in China,and also have mastered the Edge-Defined Film-Fed growth method to prepare 150 mm β-Ga2O3 crystal growth and HVPE method homogeneous epitaxial 100 mm wafer technology. Garen Semiconductor has prepared 150 mm unintentionally doped and conductive gallium oxide (β-Ga2O3) single crystal and substrate by casting method,but the domestic mass production level is low.
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