目前SiC产业正由150 mm(6英寸)向200 mm(8英寸)转型,为满足行业对大尺寸、高质量SiC同质外延片的迫切需求,采用自主研制的200 mmSiC外延生长设备在国产衬底上成功制备出150 mm、200 mm 4H-SiC同质外延片,并开发了适用于150 mm及200 mm的同质外延工艺,其中外延生长速率可大于60μm/h,在满足高速外延的同时,外延片质量优异,其中150 mm、200 mm SiC外延片厚度均匀性都可控制在1.5％以内,浓度均匀性均小于3％,致命缺陷密度小于0.3颗/cm2,外延表面粗糙度均方根Ra小于0.15 nm,各核心工艺指标均处于行业先进水平.
200 mm SiC Epitaxy Reactor and the Study of 4H-SiC Homogeneous Epitaxy Process
At present,the SiC industry is transforming from 150 mm (6-inch) to 200 mm (8-inch). In order to meet the urgent demand of the industry for large size and high quality SiC homogeneous epitaxial wafer,the 150 mm and 200 mm 4H-SiC homogeneous epitaxial layers are successfully prepared by self-developed 200 mm SiC epitaxy reactor. Meanwhile,the homogeneous epitaxy process is explored for both 150 mm and 200 mm SiC wafer. The epitaxial growth rate is faster than 60 μm/h, and the epitaxial wafer quality is also excellent while the high-speed epitaxial growth rate. At present, the thickness uniformity of 150 mm and 200 mm SiC epitaxial wafers both can be controlled within 1.5％,the concentration uniformity is less than 3％,the killer defect density is less than 0.3 ea./cm2, and the epitaxial surface roughness RMS Ra is less than 0.15 nm,which are at the advanced level of the industry.
SiC200 mm SiC epitaxy reactorChemical vapor depositionHomogeneous epitaxy
万方数据
维普
