电子工业专用设备2024,Vol.53Issue(5) :27-31,41.

基于SiC外延生长设备的压力系统设计

Pressure System Design Based on SiC Epitaxial Equipment

巴赛 胡凡 胡志坤 万胜强 刘柱 马玉玺
电子工业专用设备2024,Vol.53Issue(5) :27-31,41.

基于SiC外延生长设备的压力系统设计

Pressure System Design Based on SiC Epitaxial Equipment

巴赛 1胡凡 1胡志坤 1万胜强 1刘柱 1马玉玺1
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作者信息

  • 1. 中国电子科技集团公司第四十八研究所,湖南 长沙 410111
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摘要

为满足SiC外延炉设备运行中各腔室不同压力需求,同时实现工艺压力稳定控制,将SiC外延炉设备压力获得系统划分成工艺压力系统、高真空压力系统、超压防护系统和酸排系统,通过合理计算与选型设计了压力获得系统,并对关键工艺状态进行了试验对比.经过实际工艺验证,目前该压力获得系统已成功应用于SiC外延生长设备,系统功能完备、性能稳定.

Abstract

In order to meet the different pressure requirements of each chamber in the operation of SiC Epitaxial Equipment and to achieve stable control of process pressure,the pressure obtaining system of SiC Epitaxial Equipment is divided into process pressure system,high-vacuum pressure system,over-pressure protection system and acid discharge system,and the pressure obtaining system has been designed through reasonable calculations and selections,and the key process states have been compared in the tests.After actual process verification,the pressure obtaining system has been successfully applied to SiC Epitaxial Equipment,and the system has complete functions and stable performance.

关键词

碳化硅/外延/压力系统/真空压力系统

Key words

SiC/Epitaxial/Pressure system/Vacuum pressure systems

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基金项目

湖南省科技厅十大攻关项目(2023GK1020)

出版年

2024
电子工业专用设备
中国电子科技集团公司第四十五研究所

电子工业专用设备

影响因子:0.157
ISSN:1004-4507
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