Ion implantation,as one of the key processes in semiconductor manufacturing,has seen particle contamination emerging as a significant factor affecting device performance and yield during its process.This paper analyzes the types and sources of particle contamination during the ion im-plantation process and expounds the measures for preventing and controlling particle contamination in the process.Through comparative experiments,this study analyzed the impact of the number of scans,wafer orientation on the stage,robotic arm transfer,vacuum pumping and evacuation of the wafer chamber,and the rise and fall of the target table pressure cover on the surface particle contam-ination of wafers during the ion implantation process.The findings provide a basis and recommenda-tions for the control of particle contamination in the ion implantation process.
关键词
离子注入/颗粒污染/控制措施
Key words
Ion implantation/Particle contamination/Control measures
维普
万方数据