Inductively coupled plasma (ICP) deep silicon etching is one of the key techniques in fabricating micro electromechanical system (MEMS) devices.The comb structure of the accelerometer,and the cavity of the filter and the pressure sensor are the key process which impact on the performance of the device.They both need to be prepared by deep silicon etching.The verticality of the comb structure and the smoothness of the cavity have a direct impact on the performance of the device.This paper analyzes the profile faults in the processing,and finds out the key parameters that affect the problems such as bowing notching and sidewall breakdown.Finally the problems are improved to obtain the ideal profile and meet the performance requirements through the optimization of process parameters.
关键词
深硅刻蚀/微机电系统/刻蚀形貌/感应耦合等离子刻蚀
Key words
Deep silicon etching/Micro-electro-mechanical system/Profile/Inductively coupled plasma
维普
万方数据