首页|Li(Sc,M)Si2O6∶Cr3+(M=Ga3+/Lu3+/Y3+/Gd3+)的近红外发光性能

Li(Sc,M)Si2O6∶Cr3+(M=Ga3+/Lu3+/Y3+/Gd3+)的近红外发光性能

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荧光转换型近红外发光二极管(NIR pc-LED)具有体积小、谱带宽、峰位易调谐等优点,是新一代NIR光源发展的前沿,其关键在于研发可被蓝光有效激发的高效率宽带近红外荧光粉.LiScSi2O6∶Cr3+荧光材料的激发波长为460 nm,发射峰位在845 nm,光谱带宽为156 nm,内量子效率为64.4%.基于该体系,本文通过M离子(M = Ga3+,Lu3+,Y3+,Gd3+)取代Sc3+的方式对其性能进行调控.结果表明,引入M离子易生成杂相或发生相变,降低了材料的发光性能.本文从晶体结构出发对其调控过程进行了分析.
Near-infrared Luminescence of Li(Sc,M)Si2 O6∶Cr3+(M = Ga3+/Lu3+/Y3+/Gd3+)
Near-infrared phosphor-converted light-emitting diodes(NIR pc-LEDs)are expected to be the next-gen-eration NIR light sources,which have the advantages of small size,broad bandwidth,and easy tuning of emission peaks.The key for NIR pc-LEDs is to develop highly efficient broadband NIR phosphors that can be effectively excit-ed by blue light.LiScSi2O6∶Cr3+can be excited by blue light and emits NIR light peaked at 845 nm with a broad band-width of 156 nm and an internal quantum efficiency of 64.4%.Herein,Sc3+ is replaced by M ions(M = Ga3+,Lu3+,Y3+,Gd3+)to regulate the NIR luminescence.The introduction of M ions is easy to form heterogeneous phases or un-dergo phase transformation,thus reducing the NIR luminescence of the titled material.The regulation processes are analyzed based on the crystal structure.

LiScSi2O6∶Cr3+cation substitutioncrystal structure

卢紫微、刘永福、罗朝华、孙鹏、蒋俊

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宁波大学 材料科学与化学工程学院,浙江 宁波 315211

中国科学院 宁波材料技术与工程研究所,浙江 宁波 315201

LiScSi2O6∶Cr3+ 阳离子取代 晶体结构

国家自然科学基金浙江省"尖兵""领雁"计划中国科学院青年创新促进会

120743932022C010462021295

2024

发光学报
中国物理学会发光分会,中国科学院长春光学精密机械与物理研究所

发光学报

CSTPCD北大核心
影响因子:1.301
ISSN:1000-7032
年,卷(期):2024.45(3)
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