High Brightness Narrow-linewidth Semiconductor Laser Based on Beam Waist Splitting Polarization Combining
A 808 nm semiconductor laser was applied to a mode-selected and beam waist splitting polarization com-bining external cavity.A laser with high beam quality high brightness and narrow-linewidth was obtained.The beam quality of the fast and slow axes of the obtained laser was M2=1.85×18.2,the slow axis beam quality was improved by 48%.The output power and brightness of the laser was 5.08 W and B=22.74 MW·cm-2·sr-1 respectively.The brightness was 1.3 times that of the laser under free running.The spectral linewidth of obtained laser was 0.47 nm,0.14 times compressed to the same laser.
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