基于束腰劈裂偏振合束高亮度窄线宽半导体激光器
High Brightness Narrow-linewidth Semiconductor Laser Based on Beam Waist Splitting Polarization Combining
赵宇飞 1佟存柱 2魏志鹏1
作者信息
- 1. 长春理工大学理学院 高功率半导体激光国家重点实验室,吉林 长春 130022
- 2. 中国科学院长春光学精密机械与物理研究所 发光学及应用国家重点实验室,吉林 长春 130033
- 折叠
摘要
将一个808 nm宽发射区半导体激光器应用于纵模选择束腰劈裂偏振合束外腔中,实现了高光束质量、高亮度和窄线宽的激光输出.所获激光输出功率为5.08 W,快慢轴光束质量M2=1.85×18.2,慢轴光束质量较自由运转激光器提高48%,输出激光亮度B=22.74 MW·cm-2·sr-1,是原激光器自由运转的1.3倍.所获激光光谱线宽为0.47 nm,压缩至原激光器自由运转的光谱宽度的0.14.
Abstract
A 808 nm semiconductor laser was applied to a mode-selected and beam waist splitting polarization com-bining external cavity.A laser with high beam quality high brightness and narrow-linewidth was obtained.The beam quality of the fast and slow axes of the obtained laser was M2=1.85×18.2,the slow axis beam quality was improved by 48%.The output power and brightness of the laser was 5.08 W and B=22.74 MW·cm-2·sr-1 respectively.The brightness was 1.3 times that of the laser under free running.The spectral linewidth of obtained laser was 0.47 nm,0.14 times compressed to the same laser.
关键词
半导体激光器/合束/外腔Key words
semiconductor laser/beam combining/external cavity引用本文复制引用
出版年
2024
国家科技期刊平台
NSTL
万方数据