Improvement of Blue Light LED Epitaxy Grown on Sapphire/Graphene Substrate
In this article,we investigate the method of growing LED(Light emitting diodes)epitaxy on sapphire/graphene substrates and its impact on improving optoelectronic performance.The research results indicate that sap-phire/graphene samples have a smaller FWHM(Full width half maximum)compared to traditional sapphire samples,indicating that sapphire/graphene substrates have a lower dislocation density.And in Raman testing,it was shown that the sapphire/graphene sample was subjected to less compressive stress than traditional samples.In the elemental analysis,it was shown that the growth of the active region quantum well was good,and In and Ga elements were uni-formly distributed in the quantum well without any mutual diffusion.The photoelectric performance test of the sample shows that the LOP(Light output power)of the sapphire/graphene sample is higher than that of the traditional sam-ple,both at working current and saturation current,and the efficiency is improved compared to the traditional sam-ple.In the variable temperature test,sapphire/graphene samples also showed lower thermal resistance,lower junc-tion temperature,and smaller wavelength shift.In summary,samples grown by epitaxial growth on sapphire/gra-phene substrates have significantly improved the optoelectronic and heat dissipation performance of the device.
国家科技期刊平台
NSTL
万方数据
维普
