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自浸润式纳米压印耦合实现量子点发光二极管性能提升

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胶体量子点材料因其优良的窄发射光谱、可调发射波长、高发光效率和优异的稳定性而被广泛研究,且同时具有溶液可加工性使得量子点发光二极管(Quantum dot light-emitting diode,QLED)具有广泛的适用性和应用.然而,器件自身存在的基底模式导致QLED器件大量光子被限制在内部无法利用.本文基于纳米压印工艺同时利用聚二甲基硅氧烷(Polydimethylsiloxane,PDMS)材料本身的表面结合能开发出溶剂自浸润式纳米压印工艺,对压力依赖度低的同时简化了工艺流程,制备出高质量周期性的1.3,1,0.5 μm三种尺寸的微纳结构图案层,对红、绿、蓝三色QLED器件进行耦合实现光提取.在这种情况下,1.3 μm微纳结构耦合绿光QLED器件亮度达到 715 069 cd·m-2,最大外量子效率(External quantum efficiency,EQE)和电流效率分别提升至12.5%和57.3 cd·A-1;1 μm尺寸耦合的蓝光QLED器件各电学性能提升接近200%;0.5 μm尺寸耦合红光QLED器件EQE也从17.3%提升至20.5%.并通过角分布测试,证明微纳结构不会对QLED器件发光强度造成影响,仍然接近朗伯体发射.本工作提出的溶剂自浸润式纳米压印工艺及QLED光提取方法,为QLED的性能提升提供了一条简单有效的途径.
Improving Performance of Quantum Dot Light-emitting Diode with Self-immersed Nanoimprint-coupling
Colloidal quantum dot materials have been widely studied for their excellent narrow emission spectra,tunable emission wavelengths,high luminous efficiencies and excellent stability,and their simultaneous solution-pro-cessability has made quantum dot light-emitting diodes(QLEDs)widely applicable and used.However,the inherent substrate mode within the device leads to a large amount of photons in QLED devices being confined internally and not utilized.In this work,a solvent self-infiltration nanoimprinting process is developed based on the traditional na-noimprinting process while utilizing the surface binding energy of polydimethylsiloxane(PDMS)material itself,which has low pressure dependence and simplifies the traditional process flow,and based on which the micro-nano-structured patterns in three sizes of 1.3,1,0.5 μm with high periodicity are produced.Micro-nano-structured pat-terned layers of three sizes were fabricated based on which the red,green and blue QLED devices were out-coupled to realize light extraction.In this case,the brightness of the 1.3 μm micro-nanostructured coupled green QLED de-vice reaches 715 069 cd·m-2,and the maximum external quantum efficiency(EQE)and current efficiency are en-hanced to 12.5%and 57.3 cd·A-1.The individual electrical performances of the 1 μm-size-coupled blue QLED de-vice are nearly 200%improvement.The EQE of the 0.5 μm size-coupled red QLED device is also improved from 17.3%to 20.5%.And through the angular distribution test,it is proved that the micro-nano structure does not affect the luminous intensity of QLED devices,which is still close to the Lambertian emission.The solvent self-infiltration nanoimprinting process and QLED light extraction method proposed in this work provide a simple and effective way to improve the performance of QLEDs.

quantum dot light-emitting diodenanoimprintcoupled optical propertiesoptical simulation

梁龙、郑悦婷、林立华、胡海龙、李福山

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福州大学 物理与信息工程学院,福建 福州 350106

量子点发光二极管 纳米压印 耦合光学性能 光学仿真

国家自然科学基金

62075043

2024

发光学报
中国物理学会发光分会,中国科学院长春光学精密机械与物理研究所

发光学报

CSTPCD北大核心
影响因子:1.301
ISSN:1000-7032
年,卷(期):2024.45(4)
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