Preparation and Performance of 1.5 μm High-power Superluminescent Diodes
As the core component of fiber optic gyroscopes(FOG),the performance of the superluminescent di-odes directly affects the accuracy of the FOG.The higher the output power of the superluminescent diodes,the better the signal-to-noise ratio received by the gyroscope.InP/AlGaInAs have the advantage of high electron confinement ef-ficiency.However,due to the problem of Al oxidation,they pose certain risks in terms of application reliability.In this paper,the InP/InGaAsP are used as gain materials,and the electron confinement efficiency of the quantum wells is improved by adopting the broad bandgap InGaAsP electron blocking layer in the epi-structure.Experimental re-sults show that the electron blocking layer increases the maximum output power of the laser diode from 69 mW to 92 mW.Furthermore,by optimizing the material growth rate to improve the quality of both the active region and the strained electron blocking layer,it is observed that the reliability of the laser diode is significantly improved after ag-ing for 1 000 h,with threshold and power variation falling within acceptable ranges.Finally,superluminescent diode(SLD)chips were fabricated,and the tested results showed that the electron blocking layer increased the saturated output power of SLD chips from 19 mW to 24 mW at room temperature.The saturated operating current of SLD also increased,with a spectral width of 80 nm and a center wavelength of 1 500 nm.Furthermore,after aging for 1 000 h,the threshold and power of SLD remained stable without performance degradation.
superluminescent diodesInP/InGaAsPelectron blocking layergrowth rate of InP materials
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