Mid-infrared High-power Quantum Cascade Laser Grown by MOCVD
Quantum cascade laser(QCL)is a good laser source in the mid-infrared and far infrared spectrum,which has many advantages such as small size,light weight and high wall plug efficiency.It has important application prospects in sensing,communication and national defense.Metal-organic chemical vapor deposition(MOCVD)technology,as a more efficient epitaxy method,and MOCVD epitaxy growth technology suitable for QCL should be developed to meet the rapidly growing market demand.This paper reported a QCL with full structure epitaxial by MOCVD technology.By modifying the traditional"double-phonon resonant"to"single-phonon continuum depopulation"active region structure,the temperature characteristics of the device are improved and heat escape of electrons are reduced.According to this active region strcture,the doping concentration in the active region is changed to compare the influence of different doping concentrations on the performance of the device.The higher doped active region device with a cavity length of 8 mm and an average ridge width of about 6.7 μm has an optical power of 3.43 W,a central wavelength of about 4.6 μm,and a wall plug efficiency of 13.1%with continuous-wave mode at 20℃.The lower doped active region device with a cavity length of 8 mm has an optical power of 2.73 W,a central wavelength of about 4.5 μm,a threshold current of only 0.56 A,and a peak wall plug efficiency of 15.6%with continuous-wave mode at 20℃.The output power and wall plug efficiency of devices are significantly improved compared with the QCL epitaxial MOCVD reported in previous articles.The results show that MOCVD technology is fully capable of growing high-power QCL,which is of great significance to promote the technological progress of QCLs.
quantum cascade lasermid-infraredhigh-powermetal-organic chemical vapor deposition(MOCVD)
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维普
