首页|4H-SiC衬底上生长参数对AlGaN基深紫外多量子阱受激辐射特性的影响

4H-SiC衬底上生长参数对AlGaN基深紫外多量子阱受激辐射特性的影响

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SiC衬底是制备高性能AlGaN基深紫外激光器的良好候选衬底.采用金属有机化学气相沉积方法在4H-SiC衬底上生长了深紫外AlGaN/AlN多量子阱结构(MQWs),系统研讨了MQWs生长参数对深紫外激光结构自发辐射和受激辐射特性的影响规律.综合分析MQWs的表面形貌和发光性能后发现,随着NH3流量增加和生长温度升高,MQWs表面粗糙度降低,内量子效率提升.经优化,MQWs的内量子效率达到74.1%,室温下的激射阈值光功率密度和线宽分别为1.03 MW/cm2和1.82 nm,发光波长为248.8 nm.这主要归因于高的NH3流量和生长温度抑制了有源区中的碳杂质并入,载流子辐射复合效率和材料增益增加;同时生长速率降低,改善了MQWs结构的表面形貌,降低了界面散射损耗.采用干法刻蚀和湿法腐蚀的复合工艺制备了光滑陡直的谐振腔,激光器的腔面损耗降低,阈值光功率密度和线宽进一步降低至889 kW/cm2和1.39 nm.
Effects of Growth Parameters on Stimulated Emission Characteristics of AlGaN-based Deep Ultraviolet Multiple Quantum Wells on 4H-SiC Substrates
The SiC substrate is a good candidate for preparing high-performance AlGaN-based deep ultraviolet(DUV)lasers.The DUV AlGaN/AlN multiple quantum wells(MQWs)structures were grown on 4H-SiC substrates by metal-organic chemical vapor deposition(MOCVD).The effects of MQWs growth parameters on the spontaneous and stimulated emission characteristics of the DUV laser structure were systematically studied.After the comprehen-sive analysis of the surface morphology and emission properties of MQWs,it was found that with the increase in NH3 flow rate and growth temperature,the surface roughness of MQWs decreased and the internal quantum efficiency increased to 74.1%.At room temperature,the lasing wavelength,threshold optical power density and linewidth were 248.8 nm,1.03 MW/cm2 and 1.82 nm,respectively.The high NH3 flow rate and growth temperature suppress the incorporation of carbon impurities in the active region,leading to an increase in carrier radiative recombination efficiency and material gain.Simultaneously,the reduced growth rate improves the surface morphology of the MQWs structure and reduces interfacial scattering losses.Furthermore,smooth and steep facets were prepared by combining dry etching and wet etching processes,which reduced the mirror loss of the laser.The threshold optical power density and linewidth were decreased to 889 kW/cm2 and 1.39 nm,respectively.

aluminum gallium nitridesilicon carbideoptically pumped laserⅤ/Ⅲ ratiogrowth temperature

张睿洁、郭亚楠、吴涵、刘志彬、闫建昌、李晋闽、王军喜

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中国科学院半导体研究所 宽禁带半导体研发中心,北京 100083

中国科学院大学 材料科学与光电技术学院,北京 100049

山西中科潞安紫外光电科技有限公司,山西 长治 046000

AlGaN SiC 光泵浦激光器 Ⅴ/Ⅲ比 生长温度

国家重点研发计划国家自然科学基金国家自然科学基金国家自然科学基金国家自然科学基金国家自然科学基金北京市科技新星计划中国科学院青年创新促进会中国科学院青年创新促进会

2022YFB360510462274163620220806213501362234001622500712023048446620220000282023123

2024

10.37188/CJL.20240080

发光学报
中国物理学会发光分会,中国科学院长春光学精密机械与物理研究所

发光学报

CSTPCD北大核心
影响因子：1.301
ISSN：1000-7032
年,卷(期)：2024.45(6)
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