硅基InGaN/GaN多量子阱微盘器件的发光、探测和数据传输
Light Emission,Detection and Data Transmission in Silicon-based InGaN/GaN Multi-quantum Well Microdisk Device
秦飞飞 1卢雪瑶 1王潇璇 2吴佳启 1曹越 1张蕾 1樊学峰 1朱刚毅 1王永进1
作者信息
- 1. 南京邮电大学 通信与信息工程学院,江苏 南京 210003
- 2. 东南大学 生物科学与医学工程学院,江苏 南京 210096
- 折叠
摘要
光源和探测器的集成可有效促进轻量化和小型化光电系统的发展,InGaN/GaN多量子阱器件中发光与探测共存现象为收发一体芯片的设计提供了可能.本文采用标准半导体工艺制备了硅片上集成的圆盘形In-GaN/GaN多量子阱阵列器件,并对其发光、探测以及基本通信特性进行了研究.微盘型器件中的共振模式有助于提升其探测特性,同时各向同性的辐射特性有助于器件作为光源时与探测器在空间上的耦合.作为光源,该器件的开启电压为2.5 V,中心波长455 nm,-3 dB带宽为5.4 MHz.作为探测器,该器件对紫外到蓝光波段的光有响应,探测性能随波长增加而减弱,截止波长450 nm.在365 nm光源激发下,该器件具有最高开关比7.2×104,下降沿时间为0.41 ms.同时,基于单个微盘器件,本文构建并演示了半双工通信系统,在不同频段实现数据传输.这项研究对于电驱动光源制备以及收发一体的光通信具有重要意义.
Abstract
The integration of light source and detector can effectively promote the development of lightweight and miniaturized photoelectricity systems.The coexistence of emission and detection in InGaN/GaN multi-quantum well(MQW)light emitting diode devices provides a possibility for the design of transceiver integrated devices.In this paper,InGaN/GaN MQW microdisk array integrated on silicon wafers were fabricated using standard semiconductor processes,and their emission,detection,and basic communication characteristics were studied.The resonance mode in the microdisk device helps to improve its detection characteristics,while the isotropic radiation characteristics help the device as a light source and the detector in space coupling.As a light source,the device operates at 2.5 V with an emission wavelength at 455 nm and a-3 dB bandwidth reaching 5.4 MHz.As a detector,the device is responsive to light in the ultraviolet to blue band,and the detection performance decreases with increasing wavelength with a cutoff wavelength of 450 nm.Under excitation at 365 nm,the device exhibits a switch ratio of 7.2×104 with a fall time as short as 0.41 ms.Additionally,we constructed and demonstrated a half-duplex communication system based on a single device that achieved data transmission in different frequency bands.This research is of great significance for the preparation of electrically driven light source and the optical communication of transceiver integration.
关键词
硅基InGaN/GaN/多量子阱器件/发光与探测/半双工通信Key words
silicon-based InGaN/GaN/multiple quantum well devices/luminescence and detection/half-duplex communication引用本文复制引用
基金项目
江苏省自然科学青年基金(BK20210593)
国家自然科学基金青年基金(62204127)
出版年
2024
国家科技期刊平台
NSTL
万方数据