Light Emission,Detection and Data Transmission in Silicon-based InGaN/GaN Multi-quantum Well Microdisk Device
The integration of light source and detector can effectively promote the development of lightweight and miniaturized photoelectricity systems.The coexistence of emission and detection in InGaN/GaN multi-quantum well(MQW)light emitting diode devices provides a possibility for the design of transceiver integrated devices.In this paper,InGaN/GaN MQW microdisk array integrated on silicon wafers were fabricated using standard semiconductor processes,and their emission,detection,and basic communication characteristics were studied.The resonance mode in the microdisk device helps to improve its detection characteristics,while the isotropic radiation characteristics help the device as a light source and the detector in space coupling.As a light source,the device operates at 2.5 V with an emission wavelength at 455 nm and a-3 dB bandwidth reaching 5.4 MHz.As a detector,the device is responsive to light in the ultraviolet to blue band,and the detection performance decreases with increasing wavelength with a cutoff wavelength of 450 nm.Under excitation at 365 nm,the device exhibits a switch ratio of 7.2×104 with a fall time as short as 0.41 ms.Additionally,we constructed and demonstrated a half-duplex communication system based on a single device that achieved data transmission in different frequency bands.This research is of great significance for the preparation of electrically driven light source and the optical communication of transceiver integration.
silicon-based InGaN/GaNmultiple quantum well devicesluminescence and detectionhalf-duplex communication
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