首页|无机纳米颗粒及界面层协同改善倍增型近红外有机光电探测器性能

无机纳米颗粒及界面层协同改善倍增型近红外有机光电探测器性能

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近红外有机光电探测器具有低成本、可溶液旋涂、生物兼容性好和柔性可穿戴等优势,在生物传感、医学成像、柔性可穿戴电子器件等领域有广泛的应用前景.倍增型有机光电探测器相比于二极管型有机光电探测器,因其具有更高的外量子效率(EQE>100%)和灵敏度而备受关注.该类器件利用电极附近被载流子陷阱捕获的一种载流子能辅助另一种极性相反的载流子从外电路隧穿注入到活性层中,实现光电倍增,但陷阱的数量在一定程度上会影响器件性能的进一步提升.本文通过在活性层中掺入无机ZnO纳米颗粒来增加电子陷阱数量,使得器件在反向偏压保持暗电流密度的前提下,亮电流密度得到提高.通过优化,发现当ZnO纳米颗粒掺杂比例为5%时性能最优,在850 nm LED照射、-15 V偏压下,与未掺杂ZnO纳米颗粒器件相比,亮电流密度提升了7.4倍.在此基础上,本文协同Al2O3界面修饰层,进一步改善器件性能.结果表明,Al2O3界面修饰层的插入可改善器件的阳极界面接触特性,使得器件在正向和反向偏压下都能够实现光响应.Al2O3修饰后的器件在15 V偏压、全光谱范围内,EQE最高可达105%,R最高达104 A/W.本工作为高灵敏度有机光电探测器的发展提供了新的思路和方法.
Inorganic Nanoparticles and Interface Layer Synergistically Improve Performance of Near-infrared Organic Photomultiplication Photodetector
Novel near-infrared organic photodetectors have wide application prospects in biosensing,medical imag-ing,and wearable electronics with the advantages of low cost,solution-spin coating,good biocompatibility,and flexible.Compared with diode organic photodetectors,high sensitive photomultiplication organic photodetectors have attracted enormous attention because of their higher external quantum efficiency(EQE>100%).The mechanism of the photo-multiplication involves a type of carrier being trapped near the electrode,which assists another opposite polarity carri-er tunneling into the active layer from the extra circuit.However,the performances of the device are limited by the number of traps.In this work,inorganic ZnO nanoparticles(NPs)are added into the active layer to enhance the pho-tocurrent of the device through increasing the number of electron traps,and fortunately the dark current density of the device is maintained.It is found that the photocurrent of the device is improved by 7.4 times with optimal 5%ZnO NPs,compared with control device without ZnO NPs,under the reverse bias of-15 V,850 nm illumination.Be-sides,the Al2O3 interface modification layer is further inserted into the device to improve performance of the device.The results show that the Al2O3 based device has bi-direction response for both reverse and forward bias via changing the interface contact characteristics near anode.Ultimately,the device obtains high EQE and R up to 105%and 104 A/W at a broad wavelength range of 380-1 310 nm,applied with a forward bias of 15 V.This work provides a new idea and method for the development of high-sensitivity organic photodetectors.

near-infraredphotomultiplicationorganic photodetectorsinorganic nanoparticlesinterface modification

常铭茹、石林林、滑羽璐、冀婷、李国辉、许并社、董海亮、崔艳霞

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太原理工大学 电子信息与光学工程学院,山西 太原 030024

太原理工大学 新材料界面科学与工程教育部重点实验室,山西 太原 030024

太原理工大学 物理学院,山西 太原 030024

近红外 光电倍增 有机光电探测器 无机纳米颗粒 界面修饰

国家自然科学基金国家自然科学基金国家自然科学基金山西省重点研发计划项目山西省自然科学基金山西省自然科学基金山西浙大新材料与化工研究院研发项目山西浙大新材料与化工研究院研发项目中央引导地方科技发展资金项目中央引导地方科技发展资金项目吕梁市人才引进专项吕梁市人才引进专项

62205235U21A204966217411720210215010100720210302123154202103021231692021SX-FR0082022SX-TD020YDZJSX20231A010YDZJSX2021A012Rc2020206Rc2020207

2024

发光学报
中国物理学会发光分会,中国科学院长春光学精密机械与物理研究所

发光学报

CSTPCD北大核心
影响因子:1.301
ISSN:1000-7032
年,卷(期):2024.45(6)
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