AlGaN-based Deep Ultraviolet Light-emitting Diodes on Separated Multiple Quantum Barrier Electron Blocking Layer
Separated multiple quantum barrier electron blocking layer(EBL)have been investigated to improve the performance of AlGaN-based deep ultraviolet light-emitting diodes(DUV-LEDs)with the wavelength shorter than 250 nm.It is confirmed that the DUV-LEDs with separated multi-quantum barriers EBL contribute to a much higher hole concentration and radiative recombination rate than the conventional block EBL configuration.Due to the forma-tion of a hole acceleration zone by the separation interlayer in the EBL,the hole injection efficiency is significantly in-creased.Meanwhile,the multi-quantum barrier sample suppresses the electron leakage through raised electron barri-er,thus significantly improves the device performance.
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