Preparation and Characterization of Zn2+-doped MgGa2O4:Ni2+NIR-Ⅱ Phosphors and Their Application in Imaging
Herein,a series of ZnxMg0.993-xGa2O4:0.7％Ni2+(x=0-0.5)(ZMGO︰Ni2+) phosphors with inverse spinel structure were successfully prepared through a hydrothermal method followed by a vacuum heat treatment,emitting within the 2nd near-infrared transmittance window(NIR-Ⅱ:1000-1700 nm).The particle size of ZMGO︰Ni2+phos-phors exhibited a gradual increase with increasing Zn2+doping content.Upon excitation by a 635 nm laser,ZMGO︰Ni2+phosphors exhibited a broad emission band centered at approximately 1279 nm,which can be attributed to the characteristic emission of Ni2+.Their thermal activation energy is decreased from 244 meV to 224 meV after Zn2+dop-ing.A NIR-Ⅱ phosphor-converted light-emitting diode (NIR-Ⅱ pc-LED) was fabricated by employing ZMGO︰Ni2+phosphors with the strongest luminescence intensity,in conjunction with a 620 nm red LED chip.Based on high pene-tration ability,minimal scattering property and auto-fluorescence-free background of NIR-Ⅱ light,night vision imaging with occlusion and tissue imaging were performed using the NIR-Ⅱ pc-LED,respectively.
photoluminescencetransition metal ionNIR-Ⅱphosphors
国家科技期刊平台
NSTL
万方数据
