Zn2+掺杂MgGa2O4:Ni2+近红外二区发光材料制备、表征及其成像应用研究
Preparation and Characterization of Zn2+-doped MgGa2O4:Ni2+NIR-Ⅱ Phosphors and Their Application in Imaging
张琳 1杨健 1李胜男 1王帅 1祝汉成 1严端廷 1徐长山 1刘玉学1
作者信息
- 1. 东北师范大学物理学院,吉林长春 130024
- 折叠
摘要
通过水热法结合后期真空热处理的方法制备了具有反尖晶石结构的ZnxMg0.993-xGa2O4:0.7％Ni2+(x=0～0.5)(ZMGO︰Ni2+)近红外二区(NIR-Ⅱ:1000～1700 nm)荧光粉.随着Zn2+掺杂量的增加,ZMGO︰Ni2+粉体样品的粒子尺寸逐渐变大.在635 nm激光激发下,可观测到粉体样品位于～1279 nm处的宽带发射峰,其可被归属为Ni2+的特征发射.此外,Zn2+掺杂使样品荧光猝灭的热激活能由244 meV减小到224 meV.采用发光强度最强的ZMGO︰Ni2+粉体样品与620 nm红光LED芯片封装成NIR-Ⅱ荧光粉转换LED(NIR-Ⅱpc-LED),并基于NIR-Ⅱ光穿透能力强和不产生生物组织自荧光的特性,以NIR-Ⅱpc-LED为光源,分别研究了其在有遮挡情况的夜视成像和生物组织成像上的应用.
Abstract
Herein,a series of ZnxMg0.993-xGa2O4:0.7％Ni2+(x=0-0.5)(ZMGO︰Ni2+) phosphors with inverse spinel structure were successfully prepared through a hydrothermal method followed by a vacuum heat treatment,emitting within the 2nd near-infrared transmittance window(NIR-Ⅱ:1000-1700 nm).The particle size of ZMGO︰Ni2+phos-phors exhibited a gradual increase with increasing Zn2+doping content.Upon excitation by a 635 nm laser,ZMGO︰Ni2+phosphors exhibited a broad emission band centered at approximately 1279 nm,which can be attributed to the characteristic emission of Ni2+.Their thermal activation energy is decreased from 244 meV to 224 meV after Zn2+dop-ing.A NIR-Ⅱ phosphor-converted light-emitting diode (NIR-Ⅱ pc-LED) was fabricated by employing ZMGO︰Ni2+phosphors with the strongest luminescence intensity,in conjunction with a 620 nm red LED chip.Based on high pene-tration ability,minimal scattering property and auto-fluorescence-free background of NIR-Ⅱ light,night vision imaging with occlusion and tissue imaging were performed using the NIR-Ⅱ pc-LED,respectively.
关键词
光致发光/过渡金属离子/近红外二区/荧光粉Key words
photoluminescence/transition metal ion/NIR-Ⅱ/phosphors引用本文复制引用
基金项目
国家自然科学基金(12204093)
国家自然科学基金(12074062)
国家自然科学基金(12374391)
吉林省自然科学基金(20220101018JC)
出版年
2024
国家科技期刊平台
NSTL
万方数据