NH3/N2复合热退火技术改善高浓度Mg掺杂GaN材料性能
Enhanced Properties of Heavily Mg-doped GaN by Combining Thermal Annealing Processes in NH3/N2
蒋宗霖 1闫丹 2张宁 2魏同波 1王军喜 1魏学成1
作者信息
- 1. 中国科学院半导体研究所宽禁带半导体研发中心,北京 100083;中国科学院大学材料科学与光电技术学院,北京 100049
- 2. 中国科学院半导体研究所宽禁带半导体研发中心,北京 100083
- 折叠
摘要
研究了NH3/N2复合热退火技术对高浓度Mg掺杂GaN材料晶体质量、发光性质及导电性能的影响.实验结果表明,相较于传统N2氛围高温热退火后处理工艺而言,NH3氛围高温热退火后处理工艺可以改善高浓度Mg掺杂GaN材料的晶体质量,同时可以增进Mg受主原子的有效掺杂,使得其光致发光谱中蓝光峰强度增强.采用NH3氛围高温热退火结合N2氛围低温热退火后处理工艺复合技术制备得到的高浓度Mg掺杂GaN材料内部背景电子浓度显著降低.这是由于在NH3氛围高温热退火后处理工艺中,NH3的热分解产物能够有效降低材料内N空位和间隙Ga原子等浅施主型缺陷浓度,最终改善高浓度Mg掺杂GaN材料的导电性能.
Abstract
The effect of a novel post-growth process,i.e.high-temperature thermal annealing process in NH3,on the crystal quality,luminescence property,and electrical conductivity of the heavily Mg-doped GaN was studied.The experimental results showed that,compared with the traditional high-temperature annealing process in N2,the high-temperature thermal annealing process in NH3 can improve crystal quality in the heavily Mg-doped GaN,while promote the further effective doping of Mg acceptors,resulting in an enhancement of the intensity of the blue luminescence band in its photoluminescence spectra.The heavily Mg-doped GaN with sig-nificantly lower background electron concentration was obtained by combining high-temperature thermal anneal-ing process in NH3 with low-temperature thermal annealing process in N2.This is because that the thermal de-composition products of NH3 in the post-growth process can effectively reduce the concentration of shallow do-nor-type defects such as N vacancies and interstitial Ga atoms in the material,ultimately improving electrical conductivity of the heavily Mg-doped GaN.
关键词
氮化镓/Mg掺杂/热退火工艺/氨气Key words
gallium nitride/Mg doped/thermal annealing/ammonia引用本文复制引用
基金项目
国家重点研发计划(2022YFF0705600)
国家自然科学基金(62135013)
出版年
2024
国家科技期刊平台
NSTL
万方数据