Inkjet Printed Perovskite Quantum Dot Light-emitting Diodes Based on Multifunctional Phenethylammonium Bromide Modification Layer
Inkjet printing technology of perovskite quantum dots(PQD) hold great potential in full-color display ap-plications,but several key issues still affect their efficiency,such as unbalanced charge carrier injection,low-quali-ty perovskite films,and non-radiative recombination pathways of PQDs themselves.To address these issues,we in-troduce an interface improvement layer of Phenethylammonium bromide(PEABr) to balance the charge carrier trans-port in devices.PEABr has a similar structure to the binary solvent of perovskite(toluene,naphthalene),which can improve the printing characteristics and film-forming ability of PQDs and effectively passivate the Br-vacancies and interface defects of PQD films.Based on this strategy,we successfully achieved inkjet-printed perovskite quantum dot light-emitting diodes(PeLEDs) with a maximum external quantum efficiency(EQE) of 8.82％ and a current effi-ciency(CE) of 29.15 cd/A at a brightness of 414 cd/m²,providing beneficial insights for inkjet printing technology in future display applications.
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