基于多功能苯乙基溴化铵修饰层的喷墨打印钙钛矿量子点发光二极管
Inkjet Printed Perovskite Quantum Dot Light-emitting Diodes Based on Multifunctional Phenethylammonium Bromide Modification Layer
陈逸群 1林立华 1胡海龙 1李福山1
作者信息
- 1. 福州大学 物理与信息工程学院,福建福州 350106
- 折叠
摘要
钙钛矿量子点(PQD)的喷墨打印技术在全彩显示应用中具有巨大潜力,但一些关键问题仍然影响其发光效率,例如不平衡的载流子注入、低质量的钙钛矿薄膜以及PQD自身的非辐射复合通道等.为解决这些问题,我们引入了界面修饰层苯乙基溴化铵(PEABr)以平衡器件的载流子传输.PEABr与钙钛矿二元溶剂(甲苯、萘)具有相似的结构,可改善PQD的印刷特性和成膜能力,并有效钝化PQD膜的Br-空位和界面缺陷.基于这一策略,成功实现了在414 cd/m²亮度下,最大外量子效率(EQE)达到8.82％、电流效率(CE)达到29.15 cd/A的喷墨打印钙钛矿量子点发光二极管(PeLED),为喷墨打印技术在未来显示领域中的应用提供了有益的思路.
Abstract
Inkjet printing technology of perovskite quantum dots(PQD) hold great potential in full-color display ap-plications,but several key issues still affect their efficiency,such as unbalanced charge carrier injection,low-quali-ty perovskite films,and non-radiative recombination pathways of PQDs themselves.To address these issues,we in-troduce an interface improvement layer of Phenethylammonium bromide(PEABr) to balance the charge carrier trans-port in devices.PEABr has a similar structure to the binary solvent of perovskite(toluene,naphthalene),which can improve the printing characteristics and film-forming ability of PQDs and effectively passivate the Br-vacancies and interface defects of PQD films.Based on this strategy,we successfully achieved inkjet-printed perovskite quantum dot light-emitting diodes(PeLEDs) with a maximum external quantum efficiency(EQE) of 8.82％ and a current effi-ciency(CE) of 29.15 cd/A at a brightness of 414 cd/m²,providing beneficial insights for inkjet printing technology in future display applications.
关键词
钙钛矿量子点/喷墨打印/电致发光器件/界面修饰Key words
perovskite quantum dots/inkjet printing/light-emitting devices/interface modification引用本文复制引用
基金项目
国家重点研究与发展计划(2022YFB3606500)
国家自然科学基金(62075043)
出版年
2024
国家科技期刊平台
NSTL
万方数据