Influence of 2 nm GaAs Insertion Layer on 905 nm InGaAs Multi Quantum Well Luminescence
To investigate the effect of GaAs insertion layer on the luminescence performance of 905 nm wavelength InGaAs multi quantum well materials,based on InGaAs/InAlGaAs and InGaAs/AlGaAs quantum well materials,four period 905 nm wavelength InGaAs multi quantum wells were grown using metal organic compound chemical vapor de-position(MOCVD)technology.Atomic force microscopy(AFM)and X-ray diffraction(XRD)analyses revealed that the GaAs insertion layer optimizes the surface roughness and crystal quality of both materials.Room temperature photoluminescence(PL)testing further demonstrated that the GaAs insertion layer improves the energy band struc-ture of the materials,thereby improving luminescence efficiency.Variable temperature and variable power PL tests show that for InGaAs/InAlGaAs materials,after the GaAs insertion layer is introduced,the wavelength changes in an"S"shape with increasing temperature,and the characteristic value α is less than 1.The radiation recombination mechanism at low temperature changes from free exciton recombination to"localized states"luminescence.In contrast,for InGaAs/AlGaAs materials,the GaAs insertion layer does not alter the radiation recombination mechanism.This article is significant for advancing the understanding of the effects of the GaAs insertion layer on the optical properties and carrier recombination mechanisms of InGaAs/InAlGaAs and InGaAs/AlGaAs multiple quantum well materials.
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