首页|WS2/hBN/MoS2异质结中的能量转移和光致发光增强

WS2/hBN/MoS2异质结中的能量转移和光致发光增强

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二维过渡金属二硫族化合物(TMDs)及其异质结具有独特的光学特性,因此在发展下一代光电器件方面具有广阔的应用前景.但是,在室温下单层(1L)过渡金属二硫族化合物的光致发光效率非常低,这严重阻碍了其在光电器件中的实际应用.本文报道了一种增强单层TMDs的光致发光效率的有效方法,即通过构建1L-WS2/hBN/1L-MoS2垂直异质结,能够大幅提升单层WS2的光致发光效率,其增强因子最高可达4.2.利用瞬态吸收光谱,我们验证了该荧光增强效应是由1L MoS2向1L WS2的能量转移引起的.能量传递过程发生在皮秒时间尺度上,但其持续时间超过100 ps,这表明激子-激子湮灭对能量转移有重要影响.此外,在2L-MoS2/hBN/1L-WS2和3L-MoS2/hBN/1L-WS2异质结中,我们均能观察到单层WS2的荧光增强效应.本研究为深入理解二维TMDs异质结中的能量转移机制打下了良好的基础,并为优化基于TMDs异质结的光电器件性能提供了可行方案.
Energy Transfer and Photoluminescence Enhancement in WS2/hBN/MoS2 Heterostructures
Two-dimensional(2D)transition metal dichalcogenides(TMDs)and their heterostructures(HSs)exhibit unique optical properties and show great promise for developing next-generation optoelectronics.However,the photo-luminescence(PL)quantum yield of monolayer(1L)TMDs is still quite low at room temperature,which severely lim-its their practical applications.Here we report a PL enhancement effect of 1L WS2 at room temperature when con-structing it into 1L-WS2/hBN/1L-MoS2 vertical HSs.The PL enhancement factors(EFs)can be up to 4.2.By using transient absorption(TA)spectroscopy,we demonstrate that the PL enhancement effect is due to energy transfer from 1L MoS2 to 1L WS2.The energy transfer process occurs on a picosecond timescale and lasts more than one hundred picoseconds which indicates a prominent contribution from exciton-exciton annihilation.Furthermore,the PL en-hancement effect of 1L WS2 can be observed in 2L-MoS2/hBN/1L-WS2 and 3L-MoS2/hBN/1L-WS2 HSs.Our study provides a comprehensive understanding of the energy transfer process in the PL enhancement of 2D TMDs and a fea-sible way to optimize the performance of TMD-based optoelectronic devices.

transition metal dichalcogenidevan der Waals heterostructuresphotoluminescenceFörster resonance energy transferexciton-exciton annihilation

陈朋尧、任冰燕、张丞昱、李博远、王嘉熙、张凯旋、赵伟杰

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东南大学 物理学院,江苏 南京 211189

东南大学 吴健雄学院,江苏 南京 211102

紫金山实验室,江苏 南京 211111

过渡金属硫族化合物 范德瓦尔斯异质结 光致发光 共振能量转移 激子-激子湮灭

2024

发光学报
中国物理学会发光分会,中国科学院长春光学精密机械与物理研究所

发光学报

CSTPCD北大核心
影响因子:1.301
ISSN:1000-7032
年,卷(期):2024.45(12)