Simulation on Nitrogen-polar InGaN-based Red Light-emitting Diodes with Compositionally Graded Quantum Barrier Layer
High-performance InGaN-based red LEDs are urgently required for Micro LED displays based on Ⅲ-ni-tride materials.In this work,we use polarization engineering to construct a nitrogen-polar(N-polar)InGaN-based red LED with a compositionally graded InGaN layer as the last quantum barrier(LQB)layer.The numerical simula-tion results show that the opposite polarization electric field in N-polar nitride materials effectively enhances the con-finement of carriers in the quantum well and reduces the turn-on voltage of device.Importantly,the interface be-tween the compositionally graded InGaN LQB and p-GaN simultaneously forms electron and hole potential wells,en-abling efficient radiative recombination and thus significantly improving the luminous performance of InGaN-based red LEDs.This work provides a new approach for the design and fabrication of efficient InGaN-based red LEDs.
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