Abstract
Nano 3C-SiC@multilayer graphene oxide(NS@MGO)heterostructure was in situ prepared by carbothermal reduction of pyrolyzed precursor composed of highly dispersed cured phenolic resin and silicon dioxide derived from tetraethyl orthosilicate.The heterojunction interface,number of layers of MGO,and defect content in graphene are the three most important factors for promoting photocatalytic activity.Direct contact between 3C-SiC nanograins and MGO layers facilitates the photogenerated electrons to migrate across the heterojunction interface and avoid the formation of SiO2 nanolayers on the surface of SiC nanograins.The number of MGO layers is supposed to be less than ten instead of over-thick MGO.The concentrations of oxygenated components,considered the defect contents,decrease with the increase of sintering temperature for NS@MGO 0.175-T-150,and relative carbon content in the multilayer graphene increases.According to the heterostructures,properties,and photocatalytic reaction performance of the NS@MGO materials,the highest photocatalytic kinetic rate constant of 0.00891/min for NS@MGO 0.175-1500-150 shows that the significant enhancement in photocatalytic degradation activity under visible light(＞420 nm)irradiation is ascribed to the advantageous synergistic effects between the nano 3C-SiC particles and the direct contact multilayer graphene oxide with appropriate layers and sufficient oxygen content of 3.51％(atomic fraction)in MGO.
基金项目
国家重点研发计划(2021YFB3801301)
Shenyang National Laboratory for Materials Science(SYNL,China)Program for Youth Talent(L2022F39)
NETL
NSTL
万方数据