高等学校化学研究(英文版)2024,Vol.40Issue(4) :712-721.DOI:10.1007/s40242-024-4103-8

Optimizing the π-Bridge of Non-fullerene Acceptors to Suppress Dark Current in NIR Organic Photodetectors

SHAO Lin HUANG Yijun HONG Ling XU Zishuo YANG Xiye LIU Chunchen HUANG Fei CAO Yong
高等学校化学研究(英文版)2024,Vol.40Issue(4) :712-721.DOI:10.1007/s40242-024-4103-8

Optimizing the π-Bridge of Non-fullerene Acceptors to Suppress Dark Current in NIR Organic Photodetectors

SHAO Lin 1HUANG Yijun 1HONG Ling 1XU Zishuo 1YANG Xiye 2LIU Chunchen 1HUANG Fei 1CAO Yong1
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作者信息

  • 1. State Key Laboratory of Luminescent Materials and Devices,Institute of Polymer Optoelectronic Materials and Devices,School of Materials Science and Engineering,South China University of Technology,Guangzhou 510640,P.R.China
  • 2. State Key Laboratory of Luminescent Materials and Devices,Institute of Polymer Optoelectronic Materials and Devices,School of Materials Science and Engineering,South China University of Technology,Guangzhou 510640,P.R.China;Lumidar Technology Co.,Ltd.,Guangzhou 510530,P.R.China
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Abstract

Recently,the rapid development of non-fullerene acceptors(NFAs)has laid the foundation for performance improvements in near-infrared(NIR)organic photodetectors(OPDs).However,reducing the bandgap of NFAs to achieve strong absorption in the shorter-wave region usually leads to increased dark current density(Jd)and decreased responsivity(R),severely limiting the detectivity(D*)of NIR-OPDs.To date,it remains challenging to manipulate the Jd of NIR-OPDs through rational structure engineering of NFAs.Herein,three NIR-NFAs,namely bis(2-decyltetradecyl)4,4'-(2',7'-di-tert-butylspiro[cyclopenta[2,1-b:3,4-b']dithiophene-4,9'-fluorene]-2,6-diyl)bis(6-(((Z)-1-(dicyanomethylene)-5,6-difluoro-3-oxo-1,3-dihydro-2H-inden-2-ylidene)methyl)thieno[3,4-b]thiophene-2-carboxylate)(TSIC-4F),bis(2-decyltetradecyl)6,6'-(2',7'-di-tert-butylspiro[cyclopenta[2,1-b:3,4-b']dithiophene-4,9'-fluorene]-2,6-diyl)bis(4-(((Z)-1-(dicyanomethylene)-5,6-difluoro-3-oxo-1,3-d ihydro-2H-inden-2-ylidene)methyl)thieno[3,4-b]thiophene-2-carboxylate)(STIC-4F),and 2,2'-((2Z,2'Z)-(((2',7'-di-tert-butylspiro[cyclopenta[2,1-b:3,4-b']dithiophene-4,9'-fluorene]-2,6-diyl)bis(2,3-bis(5-(2-butyloctyl)thiophen-2-yl)thieno[3,4-b]pyrazine-7,5-diyl))bis(metha-neylylidene))bis(5,6-difluoro-3-oxo-2,3-dihydro-lH-indene-2,1-diylidene))dimalononitrile(TPIC-4F),were designed using the thieno[3,4-b]thiophene(TT)and thieno[3,4-b]pyrazine(TPy)derivatives as the it-bridge.Owing to the intramolecular S-S and S-N interactions,STIC-4F and TPIC-4F exhibited smaller backbone distortions than下SIC-4F.A significantly red-shifted absorption with a peak at 1015 nm was observed in TPIC-4F film,larger than that(ca.960 nm)for TSIC-4F and STIC-4F films.Moreover,OPDs operating in a photovoltaic mode were successfully fabricated,and TPIC-4F-based OPDs achieved the lowest Jd of 3.18×10-8 A/cm2 at-0.1 V.Impressively,although TPIC-4F-based OPDs exhibited the lowest R,higher shot-noise-limited specific detectivity(Dsh*)in 1000-1200 nm could be achieved due to its lowest Jd.This study underscored the effectiveness of optimizing the 7T-bridge structure of NFAs to suppress Jd,ultimately attaining higher Dsh* in the NIR region.

Key words

π-Bridge/Near-infrared/Non-fullerene acceptor/Dark current/Organic photodetector

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基金项目

National Natural Science Foundation of China(U21A6002)

National Natural Science Foundation of China(51933003)

National Natural Science Foundation of China(52203355)

Basic and Applied Basic Research Foundation of Guangdong Province,China(2019B030302007)

Basic and Applied Basic Research Foundation of Guangdong Province,China(2023A1515012293)

Guangzhou Science and Technology Plan Project,China(2023A04J0970)

出版年

2024
高等学校化学研究(英文版)
吉林大学

高等学校化学研究(英文版)

CSTPCD
影响因子:0.871
ISSN:1005-9040
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